標題: | Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching |
作者: | Liu, Chien Chen, Hsuan-Han Hsu, Chih-Chieh Fan, Chia-Chi Hsu, Hsiao-Hsuan Cheng, Chun-Hu 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2019 |
摘要: | We demonstrated that the 2.5nm-thick HfAO(x) N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1 mV, an ultralow I-off of 135 fA/mu m, a large I-on/I-off ratio of 8.7x 10(7) and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAlOx. CMOS NCFET shows the potential for low power logic applications. |
URI: | http://hdl.handle.net/11536/155276 |
ISBN: | 978-4-86348-719-2; 978-4-86348-717-8 |
期刊: | 2019 SYMPOSIUM ON VLSI TECHNOLOGY |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |