標題: Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching
作者: Liu, Chien
Chen, Hsuan-Han
Hsu, Chih-Chieh
Fan, Chia-Chi
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2019
摘要: We demonstrated that the 2.5nm-thick HfAO(x) N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1 mV, an ultralow I-off of 135 fA/mu m, a large I-on/I-off ratio of 8.7x 10(7) and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAlOx. CMOS NCFET shows the potential for low power logic applications.
URI: http://hdl.handle.net/11536/155276
ISBN: 978-4-86348-719-2; 978-4-86348-717-8
期刊: 2019 SYMPOSIUM ON VLSI TECHNOLOGY
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper