The Guideline on Designing Face-tunneling FET for Large-scale-device Applications in IoT

Abstract

A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its I-on current. This work shows Ion of f-TFET with one-order magnitude Ion enhancement than that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However. from experimental results, S.S. of f-TFET is a little worse than that of control and shows strong dependency on temperature because of dominance of trap-assisted tunneling. To understand how traps affect I-on of f-TEFT, the charge-pumping measurement is utilized to examine trap distributions in the tunneling region. The results show that the channel/source interfacial traps degrade the performance of f-TFET, however, with careful treatment of the epi-process of f-TFET, this device with face-tunneling shows great potential for future IoT applications.