標題: | Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics |
作者: | Kuo, Ming-Hao Liu, B. J. Huang, T. L. Lin, H. C. Li, Pei-Wen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jan-2017 |
摘要: | We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 10(3)-10(8)A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for P-IN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated. |
URI: | http://hdl.handle.net/11536/146937 |
ISSN: | 2161-4636 |
期刊: | 2017 SILICON NANOELECTRONICS WORKSHOP (SNW) |
起始頁: | 127 |
結束頁: | 128 |
Appears in Collections: | Conferences Paper |