標題: Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics
作者: Kuo, Ming-Hao
Liu, B. J.
Huang, T. L.
Lin, H. C.
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2017
摘要: We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 10(3)-10(8)A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for P-IN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.
URI: http://hdl.handle.net/11536/146937
ISSN: 2161-4636
期刊: 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 127
結束頁: 128
Appears in Collections:Conferences Paper