標題: | 0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Mode |
作者: | Chang, Wei Ling Meng, Chinchun Yang, Shih-Der Huang, Guo-Wei 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | RF channel selection;Q-enhanced active filter;dual-mode;dual-conversion;Schottky diode;SiGe BiCMOS |
公開日期: | 1-一月-2017 |
摘要: | A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage. |
URI: | http://hdl.handle.net/11536/146952 |
ISSN: | 0149-645X |
期刊: | 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) |
起始頁: | 1778 |
結束頁: | 1780 |
顯示於類別: | 會議論文 |