標題: 0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Mode
作者: Chang, Wei Ling
Meng, Chinchun
Yang, Shih-Der
Huang, Guo-Wei
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: RF channel selection;Q-enhanced active filter;dual-mode;dual-conversion;Schottky diode;SiGe BiCMOS
公開日期: 1-Jan-2017
摘要: A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.
URI: http://hdl.handle.net/11536/146952
ISSN: 0149-645X
期刊: 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
起始頁: 1778
結束頁: 1780
Appears in Collections:Conferences Paper