標題: Performance Improvement of InGaAs FinFET Using NH3 Treatment
作者: Chang, Edward Yi
Quang-Ho Luc
Huy-Binh Do
Lin, Yueh-Chin
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
公開日期: 1-Jan-2017
摘要: A marked improvement in the performance and reliability of In0.53Ga0.47As FinFETs have been demonstrated by applying an in situ remote-plasma gas (PRP) treatment. Under nitrogen passivation effects, an excellent immunity to short channel effects (SCEs) is shown for the scaled In0.53Ga0.47As FinFETs. The positive bias temperature instability (PBTI) measurements indicate that the NH3 plasma-treated In0.53Ga0.47As FinFETs are quite reliable with a small threshold voltage shift and a long-term operation. These results suggest that the in situ PRP treatment could be a key process for high-k dielectric technology for the sub-nanometer III-V MOS related devices.
URI: http://hdl.handle.net/11536/147096
ISSN: 2162-7541
期刊: 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)
起始頁: 577
結束頁: 579
Appears in Collections:Conferences Paper