完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Kang, Xiao-Rui | en_US |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.date.accessioned | 2018-08-21T05:57:09Z | - |
| dc.date.available | 2018-08-21T05:57:09Z | - |
| dc.date.issued | 2017-01-01 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/147106 | - |
| dc.description.abstract | A new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is presented in this work. The circuit simulation and experimental results with silicon testchip in a 0.18-mu m CMOS process have continued that the new proposed circuit can successfully detect the occurrence of system-level ESD-induced electrical transient disturbance. The detection output can be used as system recovery index to restore the system from frozen or upset state to a stable and known state. Therefore, the immunity of microelectronic products against the system-level ESD test can be effectively enhanced. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | transient detection circuit | en_US |
| dc.subject | electrostatic discharge (ESD) | en_US |
| dc.subject | system-level ESD | en_US |
| dc.subject | electromagnetic susceptibility (EMS) | en_US |
| dc.title | New On-Chip Transient Detection Circuit to Improve Electromagnetic Susceptibility of Microelectronic Systems | en_US |
| dc.type | Proceedings Paper | en_US |
| dc.identifier.journal | 2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000426985900117 | en_US |
| 顯示於類別: | 會議論文 | |

