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dc.contributor.authorZhang, Jin-Mingen_US
dc.contributor.authorHsieh, Ting-Enen_US
dc.contributor.authorWu, Tian-Lien_US
dc.contributor.authorChen, Szu-Haoen_US
dc.contributor.authorChen, Shi-Xuanen_US
dc.contributor.authorChou, Po-Chienen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:57:09Z-
dc.date.available2018-08-21T05:57:09Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/147118-
dc.description.abstractIn this study, we investigate the R-ON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase R-ON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the R-ON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the R-ON degradation is reduced. Third, the R-ON degradation slowly increases again. R-ON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller R-ON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the R-ON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.en_US
dc.language.isoen_USen_US
dc.titleBias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000426989100126en_US
Appears in Collections:Conferences Paper