標題: Bias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate
作者: Zhang, Jin-Ming
Hsieh, Ting-En
Wu, Tian-Li
Chen, Szu-Hao
Chen, Shi-Xuan
Chou, Po-Chien
Chang, Edward Yi
機械工程學系
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Mechanical Engineering
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
公開日期: 1-Jan-2017
摘要: In this study, we investigate the R-ON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase R-ON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the R-ON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the R-ON degradation is reduced. Third, the R-ON degradation slowly increases again. R-ON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller R-ON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the R-ON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.
URI: http://hdl.handle.net/11536/147118
ISSN: 1946-1550
期刊: 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
Appears in Collections:Conferences Paper