Bias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Abstract

In this study, we investigate the R-ON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase R-ON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the R-ON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the R-ON degradation is reduced. Third, the R-ON degradation slowly increases again. R-ON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller R-ON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the R-ON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.