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dc.contributor.authorJuang, Jing-Yeen_US
dc.contributor.authorLu, Chia-Lingen_US
dc.contributor.authorChen, Kuan-Juen_US
dc.contributor.authorChang, Tao-Chihen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2018-08-21T05:57:12Z-
dc.date.available2018-08-21T05:57:12Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2150-5934en_US
dc.identifier.urihttp://hdl.handle.net/11536/147174-
dc.description.abstractIn this study, we achieve the Cu-to-Cu direct bonding by using the (111) oriented nano-twined-Cu in N-2 ambient, without vacuum condition and no additional thermal annealing treatment is needed. A well bonded interface under a temperature gradient between 400 degrees C and 100 degrees C was identified by the evidence of the grown grain across the bonding interface. In addition, a creep assisted bonding mechanism for the Cu-Cu direct bonding is proposed. Moreover, a shear test was applied on the bonded joints for the investigation of the bonded joint strength and its fracture mode. The mean value of joint strength is 176 MPa which is significantly higher than the conventional solder joint. In summary, the Cu-to-Cu direct bonding by (111) oriented nt-Cu in no-vacuum ambient as well as the grain evolution across the bonding interface has been achieved and verified.en_US
dc.language.isoen_USen_US
dc.titleCopper-to-Copper direct bonding on highly (111) oriented nano-twinned copper in no-vacuum ambienten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 12TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)en_US
dc.citation.spage199en_US
dc.citation.epage201en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000427990200038en_US
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