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dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorYang, Tzu-Senen_US
dc.contributor.authorTsai, Shang-Weien_US
dc.date.accessioned2018-08-21T05:57:14Z-
dc.date.available2018-08-21T05:57:14Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2151-1225en_US
dc.identifier.urihttp://hdl.handle.net/11536/147207-
dc.description.abstractThis paper proposes a novel method to clearly differentiate the distinct problems of temperature and IR drop inside a chip. This method involves the placement of two same ring-oscillator-based sensors in specific areas. Simulation results show that as temperature increases, the digital counter output of the ring-oscillator-based sensor decreases. Alternatively, a decrease in the power supply decreases the digital output of the ring-oscillator-based sensor. Results also show that when the digital circuit speed was slow, the difference between the digital count outputs of the two sensors became very small; this difference was very large when the speed was high. Thus, the difference between the digital count outputs of the two sensors represents the internal power status of the chip.en_US
dc.language.isoen_USen_US
dc.subjectring oscillatoren_US
dc.subjecttemperature sensoren_US
dc.subjectir dropen_US
dc.subject3d icen_US
dc.titleNovel Application of Ring-oscillator-based Sensor for 3D IC Temperature and IR Drop Monitoringen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS)en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000428157200121en_US
Appears in Collections:Conferences Paper