Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeh, Yen-Hsien | en_US |
dc.contributor.author | Chen, Kuei-Ming | en_US |
dc.contributor.author | Wu, Yin-Hao | en_US |
dc.contributor.author | Hsu, Ying-Chia | en_US |
dc.contributor.author | Yu, Tzu-Yi | en_US |
dc.contributor.author | Lee, Wei-I | en_US |
dc.date.accessioned | 2014-12-08T15:20:43Z | - |
dc.date.available | 2014-12-08T15:20:43Z | - |
dc.date.issued | 2011-10-15 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2011.08.022 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/14736 | - |
dc.description.abstract | This work investigates the morphology of GaN etched in hydrogen (H(2)) at different temperatures, the activation energies of the rate-limiting steps of H(2) etching, and the overgrowth on a H(2)-etched GaN template. The surfaces of GaN have different profiles after being etched in H(2); they resemble a plane decorated with columns and mooring posts in a low-temperature etching condition, and with deep cavities in a high-temperature etching condition. The etched profiles show that H(2) etching has controllable etching directions: vertical and lateral. In a low-temperature condition, H(2) etching has both vertical and lateral etching directions; however, in a high-temperature condition, it has only the vertical etching direction. The activation energies of the rate-limiting steps under etching pressures of 100 and 700 Torr are estimated to be 3.22 and 3.77 eV, respectively. A thick GaN layer has been grown on a H2-etched GaN template, and it has self-separated from the underlying sapphire substrate. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Hydrogen etching | en_US |
dc.subject | Surface processes | en_US |
dc.subject | Surface structure | en_US |
dc.subject | Hydride vapor phase epitaxy | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Semiconducting III-V materials | en_US |
dc.title | Hydrogen etching of GaN and its application to produce free-standing GaN thick films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.08.022 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 333 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 16 | en_US |
dc.citation.epage | 19 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000296115800003 | - |
dc.citation.woscount | 6 | - |
Appears in Collections: | Articles |
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