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dc.contributor.authorYeh, Yen-Hsienen_US
dc.contributor.authorChen, Kuei-Mingen_US
dc.contributor.authorWu, Yin-Haoen_US
dc.contributor.authorHsu, Ying-Chiaen_US
dc.contributor.authorYu, Tzu-Yien_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2014-12-08T15:20:43Z-
dc.date.available2014-12-08T15:20:43Z-
dc.date.issued2011-10-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.022en_US
dc.identifier.urihttp://hdl.handle.net/11536/14736-
dc.description.abstractThis work investigates the morphology of GaN etched in hydrogen (H(2)) at different temperatures, the activation energies of the rate-limiting steps of H(2) etching, and the overgrowth on a H(2)-etched GaN template. The surfaces of GaN have different profiles after being etched in H(2); they resemble a plane decorated with columns and mooring posts in a low-temperature etching condition, and with deep cavities in a high-temperature etching condition. The etched profiles show that H(2) etching has controllable etching directions: vertical and lateral. In a low-temperature condition, H(2) etching has both vertical and lateral etching directions; however, in a high-temperature condition, it has only the vertical etching direction. The activation energies of the rate-limiting steps under etching pressures of 100 and 700 Torr are estimated to be 3.22 and 3.77 eV, respectively. A thick GaN layer has been grown on a H2-etched GaN template, and it has self-separated from the underlying sapphire substrate. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHydrogen etchingen_US
dc.subjectSurface processesen_US
dc.subjectSurface structureen_US
dc.subjectHydride vapor phase epitaxyen_US
dc.subjectNitridesen_US
dc.subjectSemiconducting III-V materialsen_US
dc.titleHydrogen etching of GaN and its application to produce free-standing GaN thick filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2011.08.022en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume333en_US
dc.citation.issue1en_US
dc.citation.spage16en_US
dc.citation.epage19en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000296115800003-
dc.citation.woscount6-
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