標題: | Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation |
作者: | Chuang, JC Chen, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十一月-1998 |
摘要: | The effects of thermal N-2 annealing on the passivation capability of sputtered Ta and Ta-nitride [Ta(-N)] layers against Cu oxidation in a 200 Angstrom Ta(-N) covered Ta(-N)/Cu/SiO2/Si structures was investigated. The N-2 annealed Ta layers revealed degradation in passivation capability, presumably due to grain growth of the Ta passivation layer. In contrast, the nitrogen-doped Ta-nitride layers showed a contrary trend. For the Ta-nitride layer with 23.5 atom % of nitrogen, passivation capability was effectively improved by N-2 annealing at 300 degrees C. For the Ta-nitride layer with 30.5 atom % of nitrogen, N-2 annealing at higher temperatures (500-700 degrees C) was necessary to improve the passivation capability. The healing of sputtering damage of Ta-nitride passivation layers by the thermal N-2 annealing was responsible, presumably, for the improvement of passivation capability. |
URI: | http://dx.doi.org/10.1149/1.1838909 http://hdl.handle.net/11536/147647 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1838909 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 145 |
起始頁: | 4029 |
結束頁: | 4035 |
顯示於類別: | 期刊論文 |