標題: Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation
作者: Chuang, JC
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1998
摘要: The effects of thermal N-2 annealing on the passivation capability of sputtered Ta and Ta-nitride [Ta(-N)] layers against Cu oxidation in a 200 Angstrom Ta(-N) covered Ta(-N)/Cu/SiO2/Si structures was investigated. The N-2 annealed Ta layers revealed degradation in passivation capability, presumably due to grain growth of the Ta passivation layer. In contrast, the nitrogen-doped Ta-nitride layers showed a contrary trend. For the Ta-nitride layer with 23.5 atom % of nitrogen, passivation capability was effectively improved by N-2 annealing at 300 degrees C. For the Ta-nitride layer with 30.5 atom % of nitrogen, N-2 annealing at higher temperatures (500-700 degrees C) was necessary to improve the passivation capability. The healing of sputtering damage of Ta-nitride passivation layers by the thermal N-2 annealing was responsible, presumably, for the improvement of passivation capability.
URI: http://dx.doi.org/10.1149/1.1838909
http://hdl.handle.net/11536/147647
ISSN: 0013-4651
DOI: 10.1149/1.1838909
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 145
起始頁: 4029
結束頁: 4035
顯示於類別:期刊論文