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dc.contributor.authorLin, Yi-Minen_US
dc.contributor.authorYang, Chi-Hengen_US
dc.contributor.authorHsu, Chih-Hsiangen_US
dc.contributor.authorChang, Hsie-Chiaen_US
dc.contributor.authorLee, Chen-Yien_US
dc.date.accessioned2014-12-08T15:20:48Z-
dc.date.available2014-12-08T15:20:48Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn1549-7747en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSII.2011.2161704en_US
dc.identifier.urihttp://hdl.handle.net/11536/14782-
dc.description.abstractAccording to large-page-size and random-bit-error characteristics, long-block-length Bose-Chaudhuri-Hochquenghem (BCH) decoders are applied to realize error correction in NAND Flash memory devices. To accelerate the decoding process in an area-efficient architecture, a parallel architecture with minimal polynomial combinational network (MPCN) for long BCH decoders is presented in this brief. The proposed design utilizes MPCNs to replace constant finite-field multipliers, which dominate the hardware complexity of the high-parallel Chien search architecture. Furthermore, both the syndrome calculator and the Chien search can be merged by exploiting our MPCN-based architecture, leading to significant hardware complexity reduction. From the synthesis results in the 90-nm CMOS technology, the MPCN-based joint syndrome calculation and Chien search has 46.7% gate count saving for parallel-32 BCH (4603, 4096; 39) decoder in contrast with the straightforward design.en_US
dc.language.isoen_USen_US
dc.subjectBose-Chaudhuri-Hochquenghem (BCH) codeen_US
dc.subjectChien searchen_US
dc.subjecterror correction codeen_US
dc.subjectNAND Flash memoryen_US
dc.titleA MPCN-Based Parallel Architecture in BCH Decoders for NAND Flash Memory Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSII.2011.2161704en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFSen_US
dc.citation.volume58en_US
dc.citation.issue10en_US
dc.citation.spage682en_US
dc.citation.epage686en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000296009700014-
dc.citation.woscount2-
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