標題: Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide
作者: Chen, Bo-Wei
Chang, Ting-Chang
Hung, Yu-Ju
Huang, Shin-Ping
Chen, Hua-Mao
Huang, Hui-Chun
Liao, Po-Yung
Chiang, Hsiao-Cheng
Zheng, Yu-Zhe
Yeh, Wei-Heng
Lin, Yu-Ho
Liang, Jonathan Siher
Chu, Ann-Kuo
Li, Hung-Wei
Tsai, Chih-Hung
Lu, Hsueh-Hsing
光電工程學系
Department of Photonics
關鍵字: Flexible electronics;LTPS TFTs;ELA crystallization;thermal expansion stress
公開日期: 1-Dec-2016
摘要: This letter investigates flexible polycrystalline silicon thin film transistor performance variation due to different buffer layer thicknesses. In flexible electronics, thermal expansion stress during device fabrication is inevitable. A thicker SiO2 buffer demonstrates better endurance to thermal expansion stress from the polyimide substrate during device annealing. However, if the SiO2 buffer thickness is above a critical point, its weak heat dissipation capability causes the optimal ELA crystallization condition to shift. A thermal expansion stress simulation and TEM photos were utilized to verify performance variation. Furthermore, a similar trend was observed in electrical characteristics after negative bias temperature instability.
URI: http://dx.doi.org/10.1109/LED.2016.2623680
http://hdl.handle.net/11536/147841
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2623680
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
起始頁: 1578
結束頁: 1581
Appears in Collections:Articles