A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Abstract

The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N-2/N2O flow ratios. The collision partner, N-2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner. (C) 2017 The Japan Society of Applied Physics