標題: | RF power FinFET transistors with a wide drain-extended fin |
作者: | Chen, Bo-Yuan Chen, Kun-Ming Chiu, Chia-Sung Huang, Guo-Wei Chen, Hsiu-Chih Chen, Chun-Chi Hsueh, Fu-Kuo Chen, Min-Cheng Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-四月-2017 |
摘要: | Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension layout. These experimental results suggest that FinFET transistors with a wide drain extension could be used for RF power applications, increasing the possibility of integrating RF power parts into future FinFET system-on-a-chip technologies. (C) 2017 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/JJAP.56.04CR09 http://hdl.handle.net/11536/147860 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.56.04CR09 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 56 |
顯示於類別: | 期刊論文 |