標題: RF power FinFET transistors with a wide drain-extended fin
作者: Chen, Bo-Yuan
Chen, Kun-Ming
Chiu, Chia-Sung
Huang, Guo-Wei
Chen, Hsiu-Chih
Chen, Chun-Chi
Hsueh, Fu-Kuo
Chen, Min-Cheng
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2017
摘要: Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension layout. These experimental results suggest that FinFET transistors with a wide drain extension could be used for RF power applications, increasing the possibility of integrating RF power parts into future FinFET system-on-a-chip technologies. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.04CR09
http://hdl.handle.net/11536/147860
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.04CR09
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
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