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dc.contributor.authorSun, Shun-Mingen_US
dc.contributor.authorLiu, Wen-Junen_US
dc.contributor.authorWang, Yong-Pingen_US
dc.contributor.authorHuan, Ya-Weien_US
dc.contributor.authorMa, Ganen_US
dc.contributor.authorZhu, Baoen_US
dc.contributor.authorWu, Su-Dongen_US
dc.contributor.authorYu, Wen-Jieen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorXia, Chang-Taien_US
dc.contributor.authorSun, Qing-Qingen_US
dc.contributor.authorDing, Shi-Jinen_US
dc.contributor.authorZhang, David Weien_US
dc.date.accessioned2019-04-02T05:59:38Z-
dc.date.available2019-04-02T05:59:38Z-
dc.date.issued2018-07-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5038615en_US
dc.identifier.urihttp://hdl.handle.net/11536/147893-
dc.description.abstractThe energy band alignment of the atomic-layer-deposited In2O3/beta-Ga2O3((2) over bar 10) interface is evaluated by X-ray photoelectron spectroscopy. The X-ray diffraction pattern reveals that the In2O3 film grown at 160 degrees C is amorphous, while it becomes polycrystalline at a higher deposition temperature of 200 degrees C. The bandgaps, determined by reflection electron energy loss spectroscopy, are 4.65, 3.85, and 3.47 eV for beta-Ga2O3, polycrystalline In2O3, and amorphous In2O3, respectively. Both amorphous and polycrystalline In2O3/beta-Ga2O3 interfaces have Type I alignment. The conduction and valence band offsets at the polycrystalline (amorphous) In2O3/beta-Ga2O3 interface are 0.35 and 0.45 eV (0.39 and 0.79 eV), respectively. These observations suggest that polycrystalline In2O3 as an intermediate semiconductor layer is beneficial to the barrier reduction of metal/Ga2O3 contact. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleBand alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5038615en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume113en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000439429700012en_US
dc.citation.woscount0en_US
Appears in Collections:Articles