標題: Fluctuation-induced tunneling conduction through RuO(2) nanowire contacts
作者: Lin, Yong-Han
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 15-Sep-2011
摘要: A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current-voltage (I-V) characteristics of nanocontacts between single metallic RuO(2) nanowires and contacting Au electrodes, which were pre-patterned by simple photolithography. Both the temperature behavior of contact resistance in the low-bias voltage ohmic regime and the I-V curves in the high-bias voltage non-ohmic regime have been investigated. We found that the electronic conduction processes in the wide temperature interval 1-300 K can be well described by the fluctuation-induced tunneling (FIT) conduction theory. Taken together with our previous work [Lin et al., Nanotechnology 19, 365201 (2008)], where the nanocontacts were fabricated by delicate electron-beam lithography, our study demonstrates the general validity of the FIT model in characterizing electronic nanocontacts. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638707]
URI: http://dx.doi.org/10.1063/1.3638707
http://hdl.handle.net/11536/14791
ISSN: 0021-8979
DOI: 10.1063/1.3638707
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 110
Issue: 6
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