標題: | Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory |
作者: | Tseng, Yi-Ting Chen, I-Chieh Chang, Ting-Chang Huang, J. C. Shih, Chih-Cheng Zheng, Hao-Xuan Chen, Wen-Chung Wang, Ming-Hui Huang, Wei-Chen Chen, Min-Chen Ma, Xiao-Hua Hao, Yue Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 30-七月-2018 |
摘要: | In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order, The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode, Cu ions drifted into the insulator and generated a conductive path when applying voltage bias, The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.5023527 http://hdl.handle.net/11536/147959 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.5023527 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 113 |
顯示於類別: | 期刊論文 |