標題: Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
作者: Tseng, Yi-Ting
Chen, I-Chieh
Chang, Ting-Chang
Huang, J. C.
Shih, Chih-Cheng
Zheng, Hao-Xuan
Chen, Wen-Chung
Wang, Ming-Hui
Huang, Wei-Chen
Chen, Min-Chen
Ma, Xiao-Hua
Hao, Yue
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 30-七月-2018
摘要: In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order, The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode, Cu ions drifted into the insulator and generated a conductive path when applying voltage bias, The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.5023527
http://hdl.handle.net/11536/147959
ISSN: 0003-6951
DOI: 10.1063/1.5023527
期刊: APPLIED PHYSICS LETTERS
Volume: 113
顯示於類別:期刊論文