標題: | Gas Sensing Ability on Polycrystalline-Silicon Nanowire |
作者: | Lo, Yen-Ren Chen, Huang-Ming Philip Yang, Yuh-Shyong Lu, Ming-Pei 生物科技學系 分子醫學與生物工程研究所 光電工程學系 Department of Biological Science and Technology Institute of Molecular Medicine and Bioengineering Department of Photonics |
公開日期: | 1-Jan-2018 |
摘要: | Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single-and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor. (C) The Author(s) 2018. Published by ECS. |
URI: | http://dx.doi.org/10.1149/2.0161807jss http://hdl.handle.net/11536/147960 |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.0161807jss |
期刊: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Volume: | 7 |
Appears in Collections: | Articles |