標題: Gas Sensing Ability on Polycrystalline-Silicon Nanowire
作者: Lo, Yen-Ren
Chen, Huang-Ming Philip
Yang, Yuh-Shyong
Lu, Ming-Pei
生物科技學系
分子醫學與生物工程研究所
光電工程學系
Department of Biological Science and Technology
Institute of Molecular Medicine and Bioengineering
Department of Photonics
公開日期: 1-Jan-2018
摘要: Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single-and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor. (C) The Author(s) 2018. Published by ECS.
URI: http://dx.doi.org/10.1149/2.0161807jss
http://hdl.handle.net/11536/147960
ISSN: 2162-8769
DOI: 10.1149/2.0161807jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 7
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