標題: A gate-free monolayer WSe2 pn diode
作者: Chen, Jhih-Wei
Lo, Shun-Tsung
Ho, Sheng-Chin
Wong, Sheng-Shong
Vu, Thi-Hai-Yen
Zhang, Xin-Quan
Liu, Yi-De
Chiou, Yu-You
Chen, Yu-Xun
Yang, Jan-Chi
Chen, Yi-Chun
Chu, Ying-Hao
Lee, Yi-Hsien
Chung, Chung-Jen
Chen, Tse-Ming
Chen, Chia-Hao
Wu, Chung-Lin
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 7-Aug-2018
摘要: Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron microspectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron-photon toolbox and pave the way to develop laterally 2D electronics and photonics.
URI: http://dx.doi.org/10.1038/s41467-018-05326-x
http://hdl.handle.net/11536/147972
ISSN: 2041-1723
DOI: 10.1038/s41467-018-05326-x
期刊: NATURE COMMUNICATIONS
Volume: 9
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