標題: | Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide |
作者: | Chen, Min-Chen Chang, Ting-Chang Huang, Sheng-Yao Chang, Guan-Chang Chen, Shih-Cheng Huang, Hui-Chun Hu, Chih-Wei Sze, Simon M. Tsai, Tsung-Ming Gan, Der-Shin Yeh (Huang), Fon-Shan Tsai, Ming-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2011 |
摘要: | This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved. |
URI: | http://hdl.handle.net/11536/14814 http://dx.doi.org/10.1149/2.007112esl |
ISSN: | 1099-0062 |
DOI: | 10.1149/2.007112esl |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 14 |
Issue: | 12 |
起始頁: | H475 |
結束頁: | H477 |
顯示於類別: | 期刊論文 |