標題: Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
作者: Chen, Min-Chen
Chang, Ting-Chang
Huang, Sheng-Yao
Chang, Guan-Chang
Chen, Shih-Cheng
Huang, Hui-Chun
Hu, Chih-Wei
Sze, Simon M.
Tsai, Tsung-Ming
Gan, Der-Shin
Yeh (Huang), Fon-Shan
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.
URI: http://hdl.handle.net/11536/14814
http://dx.doi.org/10.1149/2.007112esl
ISSN: 1099-0062
DOI: 10.1149/2.007112esl
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 12
起始頁: H475
結束頁: H477
顯示於類別:期刊論文