標題: Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
作者: Hsu, Chung-Chun
Chi, Wei-Chun
Tsai, Yi-He
Tsai, Ming-Li
Wang, Shin-Yuan
Chou, Chen-Han
Zhang, Jun Lin
Luo, Guang-Li
Chien, Chao-Hsin
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2018
摘要: In this paper, a method that entails using microwave thermal oxidation to form a high-quality gate dielectric on Ge through surface passivation at considerably low temperatures (<400 degrees C) is presented. Formation of the GeOx layer was confirmed by x-ray photoelectron spectroscopy. To reduce the bulk trap density and interface trap density (D-it), microwave thermal oxidation was employed for post-deposition microwave thermal oxidation after the deposition of Al2O3 through atomic layer deposition. Tiny frequency dispersion in capacitance measurement and a low D-it value of 5.9 x 10(11) cm(-2) eV(-1) near the midgap confirmed a desirable passivation effect, which was favorable in mitigating the formation of dangling bonds on the Ge surface. A small hysteresis in capacitance was also observed, suggesting that the bulk dielectric was of high quality. On the basis of these characteristics, microwave-activated GeOx is a promising passivation layer material for aggressively scaled Ge-related metal oxide semiconductor devices. Published by the AVS.
URI: http://dx.doi.org/10.1116/1.5051519
http://hdl.handle.net/11536/148160
ISSN: 1071-1023
DOI: 10.1116/1.5051519
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 36
Appears in Collections:Articles