標題: Formation of gradient Ga distribution in Cu(In,Ga)Se-2 thin-film solar cells prepared by (InGa)(2)Se-3/CuInGaSe2 stacking structure followed by Se-Vapor selenization
作者: Lin, Yu-Pin
Hsieh, Tsung-Eong
Chen, Yen-Chih
Huang, Kun-Ping
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: CIGS thin-film solar cells;InGa2Se3 (IGS) insertion;Se-vapor selenization;Gradient Ga distribution
公開日期: 15-Sep-2018
摘要: Cu(In,Ga)Se-2 (CIGS) light absorption layers with gradient Ga distribution were prepared by utilizing the sequential deposition of (InGa)(2)Se-3 (IGS) and CIGS layers. The IGS buffer layers were deposited on Mo/soda lime glass substrate at various working pressures (WP = 1, 10 and 30 mtorr) followed by the deposition of CIGS layers. Afterward, the microstructures and compositions of CIGS layers formed by the selenization of CIGS/IGS stacking layers in Se vapor ambient at 560 degrees C for 1 h were investigated. The CIGS layer with the optimized microstructure and transport properties was then implanted in the thin-film solar cells and the device with the best conversion efficiency of 8.22 +/- 0.0754% was achieved. The satisfactory solar cell performance was ascribed to the insertion of IGS layer which remedies the deficiency of In, Ga and Se elements and forms the gradient Ga distribution in CIGS layer as revealed by the secondary ion mass spectroscopy.
URI: http://dx.doi.org/10.1016/j.matchemphys.2018.06.052
http://hdl.handle.net/11536/148230
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2018.06.052
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 217
起始頁: 199
結束頁: 206
Appears in Collections:Articles