Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, Chia-Chu | en_US |
dc.contributor.author | Wu, Chu-Chun | en_US |
dc.contributor.author | Fan, Yen-Ting | en_US |
dc.contributor.author | Wu, Jenq-Shinn | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.date.accessioned | 2019-04-02T06:00:22Z | - |
dc.date.available | 2019-04-02T06:00:22Z | - |
dc.date.issued | 2018-09-01 | en_US |
dc.identifier.issn | 2158-3226 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.5040382 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148233 | - |
dc.description.abstract | Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of highquality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as "arsenidation" of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future. (C) 2018 Author(s). | en_US |
dc.language.iso | en_US | en_US |
dc.title | Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.5040382 | en_US |
dc.identifier.journal | AIP ADVANCES | en_US |
dc.citation.volume | 8 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000446058000029 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |