Full metadata record
DC FieldValueLanguage
dc.contributor.authorSimanjuntak, Firman Mangasaen_US
dc.contributor.authorChandrasekaran, Sridharen_US
dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-04-02T05:59:47Z-
dc.date.available2019-04-02T05:59:47Z-
dc.date.issued2018-10-19en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/s11671-018-2743-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/148337-
dc.description.abstractThe impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.en_US
dc.language.isoen_USen_US
dc.subjectResistive switchingen_US
dc.subjectProgrammable metallization devicesen_US
dc.subjectZinc peroxideen_US
dc.subjectPMCen_US
dc.titleSwitching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/s11671-018-2743-7en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume13en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000447760100002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles