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dc.contributor.authorChang, Chia-Fuen_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorHuang, Guan-Minen_US
dc.contributor.authorLin, Ting-Yien_US
dc.contributor.authorTai, Kuo-Lunen_US
dc.contributor.authorHuang, Chih-Yangen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2019-04-02T05:59:57Z-
dc.date.available2019-04-02T05:59:57Z-
dc.date.issued2018-11-01en_US
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nanoen.2018.09.029en_US
dc.identifier.urihttp://hdl.handle.net/11536/148394-
dc.description.abstractIn this work, we used the polycrystalline-Fe3O4 to improve the reliability of the Ag/Ta2O5/Pt resistive random access memory (RRAM). In both the Ag/Ta2O5/Fe3O4/Pt and Ag/Fe3O4/Ta2O5/Pt structures, the switching properties for these bilayer RRAMs were measured in atmosphere and vacuum environments. The results demonstrated that the humidity would affect the Ag filament formation in different environments, and the Ta2O5 and Fe3O4 interface in a different sequence would change the performance of the device, particularly the Forming voltage. Furthermore, the switching voltage and reliability of these bilayer RRAMs was better than single-layer RRAM device, which significantly increased endurance, especially in the Ag/Fe3O4/Ta2O5/Pt device. We also observed the conducting filament shape and evolution during Forming via in/ex-situ transmission electron microscopy (TEM) in the Ag/Fe3O4/Ta2O5/Pt system. In low humidity, the conducting filament was composed of many weak filaments in a low-resistance state (LRS), where the grain boundaries in the Fe3O4 layer limited filament size. The results of energy dispersive spectrometry (EDS) analysis demonstrated that the filament was composed of Ag metal. This study provided detailed switching knowledge of the bilayer RRAM for improving the reliability and power consumption of the device and new design viewpoints of the RRAM structure in future applications.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectTa2O5/Fe3O4 bilayeren_US
dc.subjectConducting filamentsen_US
dc.subjectLow power consumptionen_US
dc.subjectReliabilityen_US
dc.subjectIn/Ex-situ TEMen_US
dc.titleRevealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAMen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.nanoen.2018.09.029en_US
dc.identifier.journalNANO ENERGYen_US
dc.citation.volume53en_US
dc.citation.spage871en_US
dc.citation.epage879en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000448994600095en_US
dc.citation.woscount1en_US
Appears in Collections:Articles