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dc.contributor.authorWu, SLen_US
dc.contributor.authorChiao, DMen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:02:53Z-
dc.date.available2014-12-08T15:02:53Z-
dc.date.issued1996-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.481730en_US
dc.identifier.urihttp://hdl.handle.net/11536/1484-
dc.description.abstractIn this paper, the characteristics of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on Si substrate (TOPS) are studied, Because of the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon film into the Si substrate and the enhanced oxidation rate at the grain boundaries, the oxidation rate of the TOPS sample is close to that of a normal oxide grown on a (111) Si substrate, Also, a textured Si/SiO2 interface is obtained, The textured Si/SiO2 interface results in localized high fields and causes a much higher electron injection rate, The optimum TOPS sample can be obtained by properly oxidizing the stacked alpha-Si film, independent of the substrate doping level, Also, the optimum TOPS sample exhibits a smaller electron trapping rate and a lower interface state generation rate when compared to the sample from a standard tunnel oxide process, These differences are attributed to a lower bulk electric field and a smaller injection area in the TOPS samples.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.481730en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume43en_US
dc.citation.issue2en_US
dc.citation.spage287en_US
dc.citation.epage294en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TU66500014-
dc.citation.woscount7-
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