標題: | Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface |
作者: | Chu, Yu-Hsun Wang, Li-Hong Lee, Shin-Ye Chen, Hou-Ju Yang, Po-Ya Butler, Christopher J. Lu, Li-Syuan Yeh, Han Chang, Wen-Hao Lin, Minn-Tsong 交大名義發表 電子物理學系 National Chiao Tung University Department of Electrophysics |
公開日期: | 10-Dec-2018 |
摘要: | Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.5053144 http://hdl.handle.net/11536/148596 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.5053144 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 113 |
Appears in Collections: | Articles |