標題: Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface
作者: Chu, Yu-Hsun
Wang, Li-Hong
Lee, Shin-Ye
Chen, Hou-Ju
Yang, Po-Ya
Butler, Christopher J.
Lu, Li-Syuan
Yeh, Han
Chang, Wen-Hao
Lin, Minn-Tsong
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
公開日期: 10-Dec-2018
摘要: Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.5053144
http://hdl.handle.net/11536/148596
ISSN: 0003-6951
DOI: 10.1063/1.5053144
期刊: APPLIED PHYSICS LETTERS
Volume: 113
Appears in Collections:Articles