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dc.contributor.authorChen, Chih-Weien_US
dc.contributor.authorLin, Ru-Zhengen_US
dc.contributor.authorChiang, Li-Chuanen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.date.accessioned2019-04-02T06:01:07Z-
dc.date.available2019-04-02T06:01:07Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/1347-4065/aaf46ben_US
dc.identifier.urihttp://hdl.handle.net/11536/148719-
dc.description.abstractIn this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al2O3 via plasmaenhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec(-1) and a high ON/OFF current ratio of approximately 3 x 10(7) at V-DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (Delta I/I-0 = similar to 4410%). The readout sensitivity reached S-out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM. (C) 2019 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleJunctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detectionen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/1347-4065/aaf46ben_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume58en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department生醫工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Biomedical Engineeringen_US
dc.identifier.wosnumberWOS:000455840000001en_US
dc.citation.woscount0en_US
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