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dc.contributor.authorSano, Nobuyukien_US
dc.contributor.authorYoshida, Katsuhisaen_US
dc.contributor.authorYao, Chih-Weien_US
dc.contributor.authorWatanabe, Hiroshien_US
dc.date.accessioned2019-04-02T06:00:48Z-
dc.date.available2019-04-02T06:00:48Z-
dc.date.issued2018-12-01en_US
dc.identifier.issn1996-1944en_US
dc.identifier.urihttp://dx.doi.org/10.3390/ma11122559en_US
dc.identifier.urihttp://hdl.handle.net/11536/148751-
dc.description.abstractLocalized impurities doped in the semiconductor substrate of nanostructure devices play an essential role in understanding and resolving transport and variability issues in device characteristics. Modeling discrete impurities under the framework of device simulations is, therefore, an urgent need for reliable prediction of device performance via device simulations. In the present paper, we discuss the details of the physics associated with localized impurities in nanostructure devices, which are inherent, yet nontrivial, to any device simulation schemes: The physical interpretation and the role of electrostatic Coulomb potential in device simulations are clarified. We then show that a naive introduction of localized impurities into the Poisson equation leads to a logical inconsistency within the framework of the drift-diffusion simulations. We describe a systematic methodology for how to treat the Coulomb potential consistently with both the Poisson and current-continuity (transport) equations. The methodology is extended to the case of nanostructure devices so that the effects of the interface between different materials are taken into account.en_US
dc.language.isoen_USen_US
dc.subjectrandom dopanten_US
dc.subjectdrift-diffusionen_US
dc.subjectvariabilityen_US
dc.subjectdevice simulationen_US
dc.subjectnanodeviceen_US
dc.subjectscreeningen_US
dc.subjectCoulomb interactionen_US
dc.titlePhysics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/ma11122559en_US
dc.identifier.journalMATERIALSen_US
dc.citation.volume11en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000456419200217en_US
dc.citation.woscount0en_US
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