標題: The influence of temperature on set voltage for different high resistance state in 1T1R devices
作者: Tan, Yung-Fang
Su, Yu-Ting
Chen, Min-Chen
Chang, Ting-Chang
Tsai, Tsung-Ming
Tseng, Yi-Ting
Yang, Chih-Cheng
Zheng, Hao-Xuan
Chen, Wen-Chung
Lin, Chun-Chu
Ma, Xiao-Hua
Hao, Yue
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2019
摘要: HfO2-based 1T1R is researched in this paper. The on-off ratio is an important electrical characteristic of RRAM, with a larger on-off ratio being preferable. However, temperature also affects the set process when operating RRAM. This study finds that the set process has different sensitivities to temperature at different high resistance states (HRSs). The set voltage of the higher HRS decreases with increasing temperature, while in the lower HRS, set voltage is independent of temperature. From the result, the lower HRS is better for RRAM because it is stable at different temperatures. (C) 2019 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1882-0786/aafefa
http://hdl.handle.net/11536/148810
ISSN: 1882-0778
DOI: 10.7567/1882-0786/aafefa
期刊: APPLIED PHYSICS EXPRESS
Volume: 12
顯示於類別:期刊論文