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dc.contributor.authorChang, YAen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2019-04-02T06:00:17Z-
dc.date.available2019-04-02T06:00:17Z-
dc.date.issued2004-11-01en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.optcom.2004.07.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/148824-
dc.description.abstractIn this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductor lasersen_US
dc.subjectoptical gain propertiesen_US
dc.subjectnumerical simulationen_US
dc.subjectIII-V semiconductorsen_US
dc.titleSimulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.optcom.2004.07.009en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume241en_US
dc.citation.spage195en_US
dc.citation.epage202en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224726500024en_US
dc.citation.woscount8en_US
Appears in Collections:Articles