Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lu, TY | en_US |
dc.contributor.author | Chao, TS | en_US |
dc.date.accessioned | 2019-04-02T06:00:17Z | - |
dc.date.available | 2019-04-02T06:00:17Z | - |
dc.date.issued | 2005-04-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148891 | - |
dc.description.abstract | A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G(M)) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G(M) of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G(M) further to 29% more than the single-poly-Si gate structure without SiN capping layer. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | mobility | en_US |
dc.subject | nMOSFET | en_US |
dc.subject | poly-Si | en_US |
dc.subject | strain | en_US |
dc.title | Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride | en_US |
dc.type | Article | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 26 | en_US |
dc.citation.spage | 267 | en_US |
dc.citation.epage | 269 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000227870600015 | en_US |
dc.citation.woscount | 14 | en_US |
Appears in Collections: | Articles |