標題: Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
作者: Chen, Lun-Chun
Chen, Hung-Bin
Chang, Yu-Shuo
Lin, Shih-Han
Han, Ming-Hung
Wu, Jia-Jiun
Yeh, Mu-Shin
Lin, Yu-Ru
Wu, Yung-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band-to-band tunneling induced hot electron (BBHE);gate-all-around (GAA);nanosheet;thin-film transistor (TFT);nonvolatile memory (NVM)
公開日期: 1-Jan-2019
摘要: A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention.
URI: http://dx.doi.org/10.1109/JEDS.2018.2886446
http://hdl.handle.net/11536/148989
ISSN: 2168-6734
DOI: 10.1109/JEDS.2018.2886446
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 7
起始頁: 168
結束頁: 173
Appears in Collections:Articles