標題: Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory
作者: Yeh, Mu-Shih
Wu, Yung-Chun
Hung, Min-Feng
Liu, Kuan-Cheng
Jhan, Yi-Ruei
Chen, Lun-Chun
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Twin poly-Si;FinFET;TFT;Nonvolatile memory;Omega-gate;Nanowires;Three-dimensional;Flash memory
公開日期: 22-七月-2013
摘要: This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
URI: http://dx.doi.org/10.1186/1556-276X-8-331
http://hdl.handle.net/11536/22184
ISSN: 1931-7573
DOI: 10.1186/1556-276X-8-331
期刊: NANOSCALE RESEARCH LETTERS
Volume: 8
Issue: 
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000322786200001.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。