標題: | Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory |
作者: | Yeh, Mu-Shih Wu, Yung-Chun Hung, Min-Feng Liu, Kuan-Cheng Jhan, Yi-Ruei Chen, Lun-Chun Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Twin poly-Si;FinFET;TFT;Nonvolatile memory;Omega-gate;Nanowires;Three-dimensional;Flash memory |
公開日期: | 22-七月-2013 |
摘要: | This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications. |
URI: | http://dx.doi.org/10.1186/1556-276X-8-331 http://hdl.handle.net/11536/22184 |
ISSN: | 1931-7573 |
DOI: | 10.1186/1556-276X-8-331 |
期刊: | NANOSCALE RESEARCH LETTERS |
Volume: | 8 |
Issue: | |
結束頁: | |
顯示於類別: | 期刊論文 |