CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES

doi:10.1049/el:19930881

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TAI, K	en_US
dc.contributor.author	HUANG, KF	en_US
dc.contributor.author	WU, CC	en_US
dc.contributor.author	WYNN, JD	en_US
dc.date.accessioned	2019-04-02T05:59:15Z	-
dc.date.available	2019-04-02T05:59:15Z	-
dc.date.issued	1993-07-22	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19930881	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149111	-
dc.description.abstract	Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.subject	CHEMICAL VAPOR DEPOSITION	en_US
dc.subject	SEMICONDUCTOR LASERS	en_US
dc.title	CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19930881	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.spage	1314	en_US
dc.citation.epage	1316	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:A1993LX00200002	en_US
dc.citation.woscount	9	en_US
顯示於類別：	期刊論文