SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS

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DC Field	Value	Language
dc.contributor.author	CHANG, HC	en_US
dc.contributor.author	LIU, HW	en_US
dc.contributor.author	SU, HP	en_US
dc.contributor.author	HONG, G	en_US
dc.date.accessioned	2019-04-02T05:59:29Z	-
dc.date.available	2019-04-02T05:59:29Z	-
dc.date.issued	1995-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.468283	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149150	-
dc.description.abstract	High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.	en_US
dc.language.iso	en_US	en_US
dc.title	SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.468283	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.spage	509	en_US
dc.citation.epage	511	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995TA68100014	en_US
dc.citation.woscount	6	en_US
Appears in Collections:	Articles