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dc.contributor.authorYang, F. M.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLiu, P. T.en_US
dc.contributor.authorYeh, P. H.en_US
dc.contributor.authorYu, Y. C.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorLou, J. C.en_US
dc.date.accessioned2019-04-02T06:01:05Z-
dc.date.available2019-04-02T06:01:05Z-
dc.date.issued2007-03-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2716845en_US
dc.identifier.urihttp://hdl.handle.net/11536/149168-
dc.description.abstractIn this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMemory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2716845en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000245317100036en_US
dc.citation.woscount51en_US
Appears in Collections:Articles