Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

doi:10.1143/JJAP.35.L810

標題:	Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
作者:	Chen, JF Chen, NC Huang, WY Lee, WI Feng, MS 材料科學與工程學系電子物理學系 Department of Materials Science and Engineering Department of Electrophysics
關鍵字:	GaN;deep level;transient capacitance;OMVPE
公開日期:	1-Jul-1996
摘要:	The transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.
URI:	http://dx.doi.org/10.1143/JJAP.35.L810 http://hdl.handle.net/11536/149247
ISSN:	0021-4922
DOI:	10.1143/JJAP.35.L810
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	35
Appears in Collections:	Articles