標題: | High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C |
作者: | Chin, A Lin, BC Chen, WJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 9-Sep-1996 |
摘要: | We have designed a simple-hot wall low pressure chemical vapor deposition (LPCVD) system to grow high quality epitaxial Si films from 550 to 900 degrees C. The epitaxial film has been examined by scan electron microscopy for surface morphology, and by x-ray diffraction and cross-sectional transmission electron microscopy for crystallinity. Its quality has been found comparable to that of the substrate. Reduction of moisture and oxygen in the ambient is critical to the success of the growth at low temperatures. A combination of a leak-tight LPCVD reactor, a high flow rate Of 61/min of H-2 purge, and a pre-bake at high temperature of 950 degrees C has been used to achieve the reduction of moisture and oxygen. Degraded films form with increasing full width at half maximum of x-ray diffraction peak when a pre-bake at lower temperature is used. (C) 1996 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.117049 http://hdl.handle.net/11536/149296 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.117049 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 69 |
起始頁: | 1617 |
結束頁: | 1619 |
Appears in Collections: | Articles |