Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yen, ST | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.date.accessioned | 2019-04-02T05:58:33Z | - |
| dc.date.available | 2019-04-02T05:58:33Z | - |
| dc.date.issued | 1996-09-01 | en_US |
| dc.identifier.issn | 0018-9197 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/3.535363 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/149297 | - |
| dc.description.abstract | A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers ttl achieve a small vertical-beam divergence and a low threshold current density simultaneously, This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical intensity in quantum wells causes a low threshold current density, This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6 degrees while the threshold current density remains small. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/3.535363 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.spage | 1588 | en_US |
| dc.citation.epage | 1595 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:A1996VF78200009 | en_US |
| dc.citation.woscount | 7 | en_US |
| Appears in Collections: | Articles | |

