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dc.contributor.authorChen, WKen_US
dc.contributor.authorOu, JHen_US
dc.contributor.authorHsu, CHen_US
dc.date.accessioned2019-04-02T05:58:26Z-
dc.date.available2019-04-02T05:58:26Z-
dc.date.issued1996-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.L1234en_US
dc.identifier.urihttp://hdl.handle.net/11536/149332-
dc.description.abstractWe have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.en_US
dc.language.isoen_USen_US
dc.subjectMOCVDen_US
dc.subjectAlAsSben_US
dc.subjectincorporation efficiencyen_US
dc.titleEffects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursoren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.L1234en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume35en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1996VM31000002en_US
dc.citation.woscount3en_US
Appears in Collections:Articles