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dc.contributor.authorLin, Gen_US
dc.contributor.authorYen, STen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorLiu, DCen_US
dc.date.accessioned2019-04-02T06:00:55Z-
dc.date.available2019-04-02T06:00:55Z-
dc.date.issued1996-12-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/68.544686en_US
dc.identifier.urihttp://hdl.handle.net/11536/149366-
dc.description.abstractWe report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.en_US
dc.language.isoen_USen_US
dc.titleExtremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/68.544686en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume8en_US
dc.citation.spage1588en_US
dc.citation.epage1590en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VV26000002en_US
dc.citation.woscount27en_US
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